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| NTE2363 (NPN) & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: D Low Saturation Voltage D Large Current Capacity and Wide ASO Applications: D Power Supplies D Relay Drivers D Lamp Drivers D Automotive Wiring Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Allowable Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Ambient Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1 For PNP device (NTE2364), voltage and current values are negative. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Symbol ICBO IEBO hFE (1) hFE (2) fT Test Conditions VCB = 50V, IE = 0 VEB = 4V, IC = 0 VCE = 2V, IC = 100mA VCE = 2V, IC = 1.5A VCE = 10V, IC = 50mA Min - - 200 40 - Typ - - - - 150 Max 0.1 0.1 400 - - MHz Unit A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Output Capacitance NTE2363 NTE2364 Collector-Emitter Saturation Voltage NTE2363 NTE2364 Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage VBE(sat) IC = 1A, IB = 50mA V(BR)CBO IC = 10A, IE = 0 V(BR)EBO IE = 10A, IC = 0 VCE(sat) IC = 1A, IB = 50mA Symbol cob Test Conditions VCB = 10V, f = 1MHz Min - - - - - 60 50 6 Typ 12 22 0.15 0.3 0.9 - - - Max - - 0.4 0.7 1.2 - - - Unit pF pF V V V V V V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = .343 (8.73) Max .492 (12.5) Min .024 (0.62) Max ECB .102 (2.6) Max .059 (1.5) Typ .018 (0.48) .118 (3.0) Max .236 (6.0)Dia Max .197 (5.0) .102 (2.6) Max |
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